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2SK664 参数 Datasheet PDF下载

2SK664图片预览
型号: 2SK664
PDF下载: 下载PDF文件 查看货源
内容描述: 切换 [For Switching]
分类和应用:
文件页数/大小: 3 页 / 76 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SK664的Datasheet PDF文件第2页浏览型号2SK664的Datasheet PDF文件第3页  
Silicon MOS FETs (Small Signal)
2SK0664
(2SK664)
Silicon N-Channel MOS FET
unit: mm
For switching
I
Features
(0.425)
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10°
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
50
8
100
200
150
150
−55
to +150
V
V
mA
mA
mW
°C
°C
1: Gate
2: Source
3: Drain
0 to 0.1
Parameter
Symbol
V
DSS
Ratings
Unit
0.9
±0.1
0.9
+0.2
–0.1
I
Absolute Maximum Ratings
(Ta = 25°C)
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 3N
Internal Connection
D
G
S
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100µA, V
GS
= 0
I
D
= 100µA, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200Ω
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200Ω
10
20
min
typ
max
10
50
50
1.5
20
15
5
1
3.5
50
Unit
µA
µA
V
V
mS
pF
pF
pF
ns
ns
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
fs
|
Input capacitance (Common Source) C
iss
Output capacitance (Common Source) C
oss
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
t
on*
Turn-off time
*
t
off*
V
out
t
on
, t
off
measurement circuit
200Ω
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
90%
50Ω
100µF
V
GS
= 5V
Note) The part number in the parenthesis shows conventional part number.
0.2
±0.1
G
High-speed switching
G
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
2.1
±0.1
1
2
289