AN78xx/AN78xxF Series
I
Electrical Characteristics at T
a
=
25°C (continued)
•
AN7815, 7815F (15V type)
Parameter
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Bias current fluctuation to input
Bias current fluctuation to load
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output impedance
Output short-circuit current
Peak output current
Output voltage temperature coefficient
Symbol
V
O
V
O
REG
IN
REG
L
I
Bias
∆I
Bias(IN)
∆I
Bias(L)
V
no
RR
V
DIF(min)
Z
O
I
O(Short)
I
O(Peak)
∆V
O
/T
a
Conditions
T
j
=
25°C
V
I
=
18 to 30V, I
O
=
5mA to 1A,
T
j
=
0 to 125°C, P
D
≤
*
V
I
=
17.5 to 30V, T
j
=
25°C
V
I
=
20 to 26V, T
j
=
25°C
I
O
=
5mA to 1.5A, T
j
=
25°C
I
O
=
250 to 750mA, T
j
=
25°C
T
j
=
25°C
V
I
=
17.5 to 30V, T
j
=
25°C
I
O
=
5mA to 1A, T
j
=
25°C
f
=
10Hz to 100kHz
V
I
=
18.5 to 28.5V, f
=
120Hz
I
O
=
1A, T
j
=
25°C
f
=
1kHz
V
I
=
30V, T
j
=
25°C
T
j
=
25°C
I
O
=
5mA, T
j
=
0 to 125°C
Voltage Regulators
Min
14.4
14.25
Typ
15
Max
15.6
15.75
Unit
V
V
mV
mV
mV
mV
mA
mA
mA
µV
dB
V
mΩ
mA
A
mV/°C
11
3
12
4
4
300
150
300
150
8
1
0.5
90
54
2
19
700
2
−1
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
23V, I
O
=
500mA, C
I
=
0.33µF and C
O
=
0.1µF.
* AN78xx series: 15W, AN78xxF series: 10.25W
•
AN7818, 7818F (18V type)
Parameter
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Bias current fluctuation to input
Bias current fluctuation to load
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Output impedance
Output short-circuit current
Peak output current
Output voltage temperature coefficient
Symbol
V
O
V
O
REG
IN
REG
L
I
Bias
∆I
Bias(IN)
∆I
Bias(L)
V
no
RR
V
DIF(min)
Z
O
I
O(Short)
I
O(Peak)
∆V
O
/T
a
Conditions
T
j
=
25°C
V
I
=
21 to 33V, I
O
=
5mA to 1A,
T
j
=
0 to 125°C, P
D
≤
*
V
I
=
21 to 33V, T
j
=
25°C
V
I
=
24 to 30V, T
j
=
25°C
I
O
=
5mA to 1.5A, T
j
=
25°C
I
O
=
250 to 750mA, T
j
=
25°C
T
j
=
25°C
V
I
=
21 to 33V, T
j
=
25°C
I
O
=
5mA to 1A, T
j
=
25°C
f
=
10Hz to 100kHz
V
I
=
22 to 32V, I
O
=
100mA, f
=
120Hz
I
O
=
1A, T
j
=
25°C
f
=
1kHz
V
I
=
35V, T
j
=
25°C
T
j
=
25°C
I
O
=
5mA, T
j
=
0 to 125°C
53
2
16
700
2
−1.1
110
Min
17.3
17.1
14
4
12
4
4.1
Typ
18
Max
18.7
18.9
360
180
360
180
8
1
0.5
Unit
V
V
mV
mV
mV
mV
mA
mA
mA
µV
dB
V
mΩ
mA
A
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
27V, I
O
=
500mA, C
I
=
0.33µF and C
O
=
0.1µF.
* AN78xx series: 15W, AN78xxF series: 10.25W
6
PANASONIC [ PANASONIC SEMICONDUCTOR ]
