GU-E PhotoMOS (AQW414EH)
2. Electrical characteristics (Ambient temperature: 25
°
C
77
°
F)
Item
Maximum
Minimum
LED reverse (ON)
current
Typical
Typical
LED dropout voltage
Maximum
Typical
On resistance
Output
Off state leakage
current
Turn on time*
Turn off time*
I/O capacitance
Initial I/O isolation
resistance
Maximum
Maximum
Typical
Maximum
Typical
Maximum
Typical
Maximum
Minimum
I
Leak
T
off
T
on
C
iso
R
iso
R
on
LED operate (OFF)
current
Typical
Symbol
I
Foff
I
Fon
V
F
AQW414EH (A)
1.3mA
3.0mA
0.4mA
1.2mA
1.25 (1.14 V at I
F
=5mA)
1.5V
26
Ω
35
Ω
10
µ
A
0.8ms
3.0ms
0.2ms
1.0ms
0.8pF
1.5pF
1,000M
Ω
Condition
I
L
=Max.
I
L
=Max.
I
F
=50mA
I
F
=0mA
I
L
=Max.
Within 1 s on time
I
F
=5mA
V
L
=Max.
I
F
=0mA
➝
5mA
I
L
=Max.
I
F
=5mA
➝
0mA
I
L
=Max.
f =1MHz
V
B
=0V
500V DC
*Operate/Reverse time
Input
Transfer charac-
teristics
Note: Recommendable LED forward current I
F
= 5 to 10mA.
Input
Output
10%
90%
Toff
Ton
REFERENCE DATA
1. Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40
°
C to +85
°
C
–40
°
F to +185
°
F
200
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
50
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3
Operate (OFF) time, ms
2.5
2
1.5
1
0.5
0
Load current, mA
150
Using only 1 channel
On resistance,
Ω
40
30
100
Using 2 channels
20
50
10
0
–40 –20
0
20
40
60
8085 100
Ambient temperature,
°C
0
–40
–20
0
20
40
60
8085
–40
–20
0
20
40
60
8085
Ambient temperature,
°C
Ambient temperature,
°C
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