This product complies with the RoHS Directive (EU 2002/95/EC).
Light Emitting Diodes
LNJ208R8ARA
Surface Mounting Chip LED
SS Type
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
Forward current
Pulse forward current
*
Reverse voltage
Operating ambient temperature
Storage temperature
Symbol
P
D
I
F
I
FP
V
R
T
opr
T
stg
Rating
50
20
100
3
–25 to +85
–40 to +100
Unit
mW
mA
mA
V
°C
°C
Lighting Color
Red
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics
T
a
= 25°C
Parameter
Luminous intensity
Reverse current
Forward voltage
Peak emission wavelength
Spectral half band width
I
O
I
F
Luminous intensity I
O
(mcd)
10
Symbol
I
O
I
R
V
F
λ
P
Δλ
100
Conditions
I
F
= 10 mA
V
R
= 3 V
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
V
F
Min
2.75
Typ
6.7
Max
100
Unit
mcd
µA
V
nm
nm
1.72
660
20
1 000
2.5
Relative luminous intensity
T
a
10
Relative luminous intensity (%)
1.6
1.8
2.0
2.2
2.4
Forward current I
F
(mA)
100
1
0.1
1
10
100
1
10
−20
0
20
40
60
80
100
Forward current I
F
(mA)
Forward voltage V
F
(V)
Ambient temperature T
a
(°C)
Relative luminous intensity
λ
P
Relative luminous intensity (%)
100
80
60
40
20
0
500
40°
50°
60°
70°
80°
600
700
800
90°
100
80
60
40
20
25
I
F
T
a
Directive characteristics
30°
0° 10°
20° 10°
20°
80°
60°
40°
20°
0
20
40
60
80
30°
40°
50°
60°
Forward current I
F
(mA)
20
15
10
70°
5
80°
90°
100
0
0
20
40
60
80
100
Peak emission wavelength
λ
P
(nm)
Publication date: December 2008
Relative luminous intensity (%)
SHD00414BEK
Ambient temperature T
a
(°C)
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
