Switching Diodes
MA6X123
(MA123)
Silicon epitaxial planar type
Unit : mm
For switching circuit
I
Features
•
Four-element contained in one package, allowing high-density
mounting
•
Centrosymmetrical wiring, allowing to free from the taping direc-
tion
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
3
2
1
(0.65)
0.30
+0.10
–0.05
10°
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward current
*1
Peak forward current
*1
Non-repetitive peak forward
surge current
*1,2
Junction temperature
Storage temperature
Note) *1 : Value for single diode
*2 : t = 1 s
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
225
500
150
−55
to
+150
Unit
V
V
mA
mA
mA
°C
°C
1 : Anode 1
2 : Anode 2
3 : Cathode 3,4
0 to 0.1
I
Absolute Maximum Ratings
T
a
=
25°C
4 : Anode 3
5 : Anode 2
6 : Cathode 1,2
Mini6-G2 Package
Marking Symbol: M2B
Internal Connection
6
5
4
1
2
3
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
=
75 V
I
F
=
100 mA
I
R
=
100
µA
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
Ω
80
2
3
Conditions
Min
Typ
Max
100
1.2
Unit
nA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
0.4
±0.2
5°
109
PANASONIC [ PANASONIC SEMICONDUCTOR ]
