Switching Diodes
MA6X125
(MA125)
Silicon epitaxial planar type
Unit : mm
For switching circuits
I
Features
•
Four-element contained in one package, allowing high-density
mounting
2.8
0.65
±
0.15
6
1.9
±
0.2
0.95
0.95
+
0.2
−
0.3
+
0.25
1.5
−
0.05
1
0.65
±
0.15
1.45
±
0.1
0.3
−
0.05
+
0.1
2.9
−
0.05
+
0.2
5
2
4
3
Peak reverse voltage
Forward current (DC)
*
Peak forward current
*
Junction temperature
Storage temperature
Note) *1 : Value for single diode
V
RM
I
F
I
FM
T
j
T
stg
40
100
200
150
−55
to
+150
V
mA
mA
°C
°C
1 : Cathode 1
2 : Anode 2
3 : Cathode 3
Anode 4
0 to 0.1
Reverse voltage (DC)
V
R
40
V
0.1 to 0.3
0.4
±
0.2
0.8
Parameter
Symbol
Rating
Unit
1.1
−
0.1
4 : Anode 3
5 : Cathode 4
6 : Anode 1
Cathode 2
Mini Type Package (6-pin)
Marking Symbol: M2I
Internal Connection
6
5
4
1
2
3
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*3
Symbol
I
R
V
F
V
R
C
t
t
rr1*1
t
rr2*2
V
R
=
40 V
I
F
=
100 mA
I
R
=
100
µA
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
Ω
150
90
40
5
Conditions
Min
Typ
Max
100
1.2
Unit
nA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Between pins 1 and 6, Between pins 3 and 5
*2 : Between pins 2 and 6, Between pins 3 and 4
*3 : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
0.16
−
0.06
I
Absolute Maximum Ratings
T
a
=
25°C
+
0.2
0.5
−
0.05
+
0.1
+
0.1
113
PANASONIC [ PANASONIC SEMICONDUCTOR ]
