Rectifier Diodes
MA6X129
(MA129)
Silicon epitaxial planar type
For small power current rectification
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
1.50
+0.25
–0.05
2.8
+0.2
–0.3
Unit : mm
0.16
+0.10
–0.06
0.30
+0.10
–0.05
0.50
+0.10
–0.05
I
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Output current
Single
Triple
Repetitive peak
forward current
Single
Triple
Single
I
FSM
T
j
T
stg
I
FRM
Symbol
V
R
V
RM
I
O
Rating
200
200
100
200
200
600
350
1 000
150
−55
to
+150
°C
°C
mA
mA
Unit
V
V
mA
10°
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Cathode 1
4: Anode 1
2: Cathode 2
5: Anode 2
3: Cathode 3
6: Anode 3
Mini6-G1 Package
Marking Symbol: M4F
Internal Connection
6
5
4
1
2
3
Non-repetitive peak
forward surge current
*
Triple
Junction temperature
Storage temperature
Note) * : t = l s
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Symbol
I
R
V
F
C
t
V
R
= 200 V
I
F
= 200 mA
V
R
= 0 V, f = 1 MHz
4.5
Conditions
Min
Typ
Max
0.2
1.2
Unit
µA
V
pF
Note) Rated input/output frequency: 3 MHz
Note) The part number in the parenthesis shows conventional part number.
0 to 0.1
(0.65)
•
Three isolated elements contained in one package, allowing high-
density mounting
•
Allowing high voltage rectification
3
2
1
223
0.4
±0.2
I
Features
5°
PANASONIC [ PANASONIC SEMICONDUCTOR ]
