Switching Diodes
MA3S132E
Silicon epitaxial planar type
Unit : mm
For switching circuits
I
Features
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
•
Super-small SS-mini type package contained two elements, allow-
ing high-density mounting
1.60
−
0.03
0.80
0.80
0.51
0.51
0.28
±
0.05
1.60
±
0.1
0.80
0.80
±
0.05
1
+
0.05
3
2
0.28
±
0.05
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current
(DC)
Peak forward
current
Non-repetitive peak
forward surge current*
Junction temperature
Storage temperature
Note) * : t = 1 s
Single
Double
Single
Double
Single
Double
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
150
225
340
500
750
150
−55
to
+150
Unit
V
V
mA
0.60
−
0.03
0.44
0.44
+
0.05
1 : Anode 1
2 : Anode 2
3 : Cathode 1
Cathode 2
SS-Mini Type Package (3-pin)
0.88
−
0.03
mA
Marking Symbol: MU
mA
°C
°C
Internal Connection
1
3
2
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
=
75 V
I
F
=
100 mA
I
R
=
100
µA
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
Ω
80
2
3
Conditions
Min
Typ
Max
100
1.2
Unit
nA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.12
−
0.02
+
0.05
+
0.05
I
Absolute Maximum Ratings
T
a
=
25°C
0.28
±
0.05
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
