Switching Diodes
MA3X158
Silicon epitaxial planar type
Unit : mm
For small power rectification and surge absorption
0.65
±
0.15
2.8
−
0.3
1.5
+
0.2
+
0.25
−
0.05
0.65
±
0.15
0.95
2
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Non-repetitive peak forward
surge voltage
Output current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Note) * : t = 1 s
Symbol
V
R
V
RRM
V
RSM
I
F(AV)
I
FSM
T
j
T
stg
Rating
200
250
300
100
500
125
−55
to
+125
Unit
V
V
V
mA
mA
°C
°C
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M1C
Internal Connection
1
3
2
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F
V
R
= 200 V
I
F
= 100 mA
Conditions
Min
Typ
Max
1.0
1.3
Unit
µA
V
Note) Rated input/output frequency: 3 MHz
0 to 0.1
0.1 to 0.3
0.4
±
0.2
1.1
0.8
0.16
−
0.06
+
0.2
−
0.1
I
Absolute Maximum Ratings
T
a
= 25°C
+
0.1
0.4
−
0.05
•
High reverse voltage V
R
•
Large forward current I
F(AV)
•
Small package and allowing automatic mounting
1.9
±
0.2
2.9
−
0.05
+
0.2
1
3
0.95
+
0.1
1.45
I
Features
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
