Switching Diodes
MA4X194
(MA194)
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65
±
0.15
2.8
−
0.3
+
0.2
1.5
−
0.05
+
0.25
0.65
±
0.15
+
0.2
−
0.1
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward
current
Repetitive peak
forward current
Non-repetitive peak
forward surge current
*
Power dissipation
Junction temperature
Storage temperature
Note) * : t = 1 s
Single
Double
Single
Double
Single
Double
V
R
V
RRM
I
F(AV)
I
F(AV)
I
FRM
I
FRM
I
FSM
I
FSM
P
D
T
j
T
stg
40
40
100
75
225
170
500
375
150
150
−55
to
+150
V
V
mA
mA/Unit
mA
mA/Unit
mA
mA/Unit
mW
°C
°C
1.1
0.4
±
0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1F
Internal Connection
4
3
1
2
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Symbol
I
R1
I
R2
Forward voltage (DC)
Terminal capacitance
Forward dynamic resistance
Reverse recovery time
*3
V
F
C
t
r
f* 1
r
f* 2
t
rr
V
R
= 40 V
V
R
= 35 V, T
a
= 150°C
I
F
= 100 mA
V
R
= 6 V, f = 1 MHz
I
F
= 3 mA, f = 30 MHz
I
F
= 3 mA, f = 30 MHz
I
F
= 10 mA, V
R
= 6 V
I
rr
= 0.1 · I
R
, R
L
= 100
Ω
0.98
1.0
1.7
Conditions
Min
Typ
Max
10
10
1.2
2.0
2.5
3.6
100
ns
Unit
nA
µA
V
pF
Ω
Note) *1 : r
f
measuring instrument: Nihon Koshuha Model TDC-121A
*2 : r
f
measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
*3 : t
rr
measuring circuit
Bias Application Unit N-50BU
Input Pulse
t
r
10%
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
0 to 0.1
0.1 to 0.3
0.8
+
0.1
Parameter
Symbol
Rating
Unit
0.16
−
0.06
0.6
−
0
I
Absolute Maximum Ratings
T
a
= 25°C
+
0.1
3
0.4
−
0.05
•
Short reverse recovery time t
rr
•
Two isolated elements contained in one package, allowing high-
density mounting
0.5 R
1.9
±
0.2
0.95
4
0.5
1
2.9
−
0.05
+
0.2
0.95
2
0.2
+
0.1
0.4
−
0.05
1.45
+
0.1
I
Features
197
PANASONIC [ PANASONIC SEMICONDUCTOR ]
