Schottky Barrier Diodes (SBD)
MA2H735
Silicon epitaxial planar type
Unit : mm
For switching circuits
3.2
±
0.1
0 to 0.05
•
Small and thin Half New Mini-power package
•
Allowing to rectify under (I
F(AV)
= 1 A) condition
•
Low V
F
(forward voltage) type: V
F
>
0.5 V
（at
I
F
= 1 A）
1.9
±
0.1
2
1
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
30
30
1
30
125
−40
to
+125
Unit
V
V
A
A
°C
°C
0.25
−
0.05
0.9
±
0.2
3.8
±
0.2
0.9
±
0.2
1 : Anode
2 : Cathode
Half New Mini-Power Package
Marking Symbol: A
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
= 30 V
I
F
= 1 A
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 0.1 · I
R
, R
L
= 100
Ω
50
30
Conditions
Min
Typ
Max
1
0.50
Unit
mA
V
pF
ns
Note) 1. Rated input/output frequency: 20 MHz
2. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
Input Pulse
t
p
10%
t
I
F
Output Pulse
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1.85
±
0.2
+
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
1.0
±
0.2
I
Features
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
