Variable Capacitance Diodes
MA2S331
Silicon epitaxial planar type
Unit : mm
For VCO of an UHF radio
I
Features
•
Small series resistance r
D.
r
D
= 0.18
Ω
(typ.)
•
Good linearity of C
−
V curve
•
SS-mini package, optimum for down-sizing of equipment
0.15 min.
0.15 min.
0.27
−
0.02
0.8
±
0.1
+
0.05
1.3
±
0.1
1.7
±
0.1
I
Absolute Maximum Ratings
T
a
= 25°C
Reverse voltage (DC)
Forward current (DC)
Junction temperature
Storage temperature
V
R
I
F
T
j
T
stg
12
20
150
−55
to
+150
V
mA
°C
°C
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
0.7
±
0.1
Parameter
Symbol
Rating
Unit
Marking Symbol: F
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Diode capacitance
Symbol
I
R
C
D(1V)
C
D(2V)
C
D(4V)
C
D(10V)
Capacitance ratio
C
D(1V)
/C
D(4V)
C
D(2V)
/C
D(10V)
Series resistance
*
r
D
C
D
= 9 pF, f = 470 MHz
V
R
= 12 V
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
V
R
= 10 V, f = 1 MHz
17.0
14.0
10.0
5.5
1.53
2.25
6.0
1.6
2.5
0.18
15.0
Conditions
Min
Typ
Max
10
20.0
16.0
12.4
6.5
1.83
2.75
0.22
Unit
nA
pF
pF
pF
pF
Ω
Note) 1.
Rated input/output frequency: 470 MHz
2. : r
f
measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
*
0 to 0.1
0.13
−
0.02
+
0.05
0.27
−
0.02
+
0.05
1