Schottky Barrier Diodes (SBD)
MA2S728
Silicon epitaxial planar type
Unit : mm
0.30
±
0.05
For switching circuits
I
Features
•
Super-small SS-mini type 2-pin package
•
Allowing high-density mounting
•
Low forward rise voltage (V
F
) and satisfactory wave detection
efficiency (η)
•
Small temperature coefficient of forward characteristic
•
Extremely low reverse current I
R
2
1
0.01
±
0.01
0.12
−
0.02
+
0.05
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
FM
I
F
T
j
T
stg
Rating
30
30
150
30
125
−55
to
+125
Unit
V
V
mA
mA
°C
°C
0
−
0.05
+
0
1.20
−
0.03
+
0.05
1.60
±
0.05
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: B
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
η
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
Ω
V
in
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kΩ , C
L
= 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
Conditions
Min
Typ
Max
300
0.4
1
0.60
−
0.03
+
0.05
Unit
nA
V
V
pF
ns
1.5
1
Detection efficiency
65
%
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.80
−
0.03
+
0.05
1