Schottky Barrier Diodes (SBD)
MA6S718
Silicon epitaxial planar type
Unit : mm
For switching circuits
•
Small S-mini type 6-pin package
•
Non connected three elements incorporated in one package,
allowing high-density mounting
•
Flat lead type package, resulting in promotion of the actual
mounting ratio and solderability with a high-speed mounter
•
Optimum for low-voltage rectification because of its low forward
rise voltage (V
F
)
•
Optimum for high-frequency rectification because of its short re-
verse recovery time (t
rr
)
2.0
±
0.1
0.65 0.65
2.1
±
0.1
1.25
±
0.1
1
2
3
6
5
4
I
Features
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
*
Forward current (DC)
*
Junction temperature
Storage temperature
Note) * : Value in per diode
Symbol
V
R
V
RM
I
FM
I
F
T
j
T
stg
Rating
30
30
150
30
125
−55
to
+125
Unit
V
V
mA
mA
°C
°C
0.7
±
0.1
1 : Anode 1
4 : Cathode 3
2 : Anode 2
5 : Cathode 2
3 : Anode 3
6 : Cathode 1
S-Mini Type Package (6-pin)
Marking Symbol: M2N
Internal Connection
1
2
3
6
5
4
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
η
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
Ω
V
in
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kΩ, C
L
= 10 pF
1.5
1
Conditions
Min
Typ
Max
1
0.4
1
Unit
µA
V
V
pF
ns
Detection efficiency
65
0.2
±
0.05
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Applicaiton Unit N-50BU
t
r
Input Pulse
t
p
10%
t
I
F
Output Pulse
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
