Schottky Barrier Diodes (SBD)
MA3X715
(MA715)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.40
+0.10
–0.05
3
0.16
+0.10
–0.06
1.50
+0.25
–0.05
s
Features
•
Low forward voltage V
F
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
•
Mini type 3-pin package
2.8
+0.2
–0.3
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Single
Series
Peak forward
current
Single
Series
T
j
T
stg
I
FM
Symbol
V
R
V
RM
I
F
Rating
30
30
30
20
150
110
125
−55
to
+125
°C
°C
mA
Unit
V
V
mA
10˚
1.1
+0.2
–0.1
(0.65)
1.1
+0.3
–0.1
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: M2Y
Internal Connection
3
Junction temperature
Storage temperature
1
0 to 0.1
2
s
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
Detection efficiency
C
t
t
rr
η
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
Ω
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
1.5
1.0
65
Conditions
Min
Typ
Max
30
0.3
1.0
pF
ns
%
Unit
µA
V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Bias Application Unit N-50BU
t
r
10%
3. *: t
rr
measuring instrument
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00075BED
0.4
±0.2
5˚
Publication date: January 2002
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
