Schottky Barrier Diodes (SBD)
MA2J729
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit
For small current rectification
K
A
0.625
0.16
−
0.06
+
0.1
•
Sealed in the S-mini (2-pin) mold and super small type
•
Allowing to rectify under (I
F(AV)
= 200 mA) condition
•
Allowing high-density mounting
2
1
1.25
±
0.1
0.5
±
0.1
I
Features
0.3
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward current
Average forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
(non-repetitive)
T
j
T
stg
150
−55
to
+150
°C
°C
Symbol
V
R
V
RRM
I
FM
I
F(AV)
I
FSM
Rating
30
30
300
200
1
Unit
V
V
mA
mA
A
0.4
±
0.1
1.7
±
0.1
2.5
±
0.2
0.4
±
0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2B
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
= 30 V
I
F
= 200 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
Ω
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : t
rr
measuring instrument
30
3.0
Conditions
Min
Typ
Max
50
0.55
Unit
µA
V
pF
ns
Bias Application Unit N-50BU
t
r
Input Pulse
t
p
10%
t
I
F
Output Pulse
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.7
±
0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
