Band Switching Diodes
MA2Z077
Silicon epitaxial planar type
Unit : mm
For band switching
I
Features
•
Low forward dynamic resistance r
f
•
Less voltage dependence of diode capacitance C
D
•
S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
INDICATES
CATHODE
0.4
±
0.15
1
2
0.4
±
0.15
1.7
±
0.1
2.5
±
0.2
Parameter
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature
*
Storage temperature
Symbol
V
R
I
F
T
opr
T
stg
Rating
35
100
−25
to
+85
−55
to
+150
Unit
V
mA
°C
°C
0.9
±
0.1
0 to 0.05
1 : Anode
2 :Cathode
S-Mini Type Package (2-pin)
Note) * : Maximum ambient temperature during operation
Marking Symbol: 4B
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance
*
Symbol
I
R
V
F
C
D
r
f
V
R
= 33 V
I
F
= 100 mA
V
R
= 6 V, f = 1 MHz
I
F
= 2 mA, f = 100 MHz
Conditions
Min
Typ
0.01
0.92
0.9
0.65
Max
100
1
1.2
0.85
Unit
nA
V
pF
Ω
Note) 1．
Rated input/output frequency: 100 MHz
2． : r
f
measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
*
0.16
−
0.06
+
0.1
I
Absolute Maximum Ratings
T
a
= 25°C
0.3
−
0.05
+
0.1
1.25
±
0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
