Schottky Barrier Diodes (SBD)
MA3S795
(MA795)
Silicon epitaxial planar type
Unit: mm
0.80
±0.05
For switching
I
Features
•
High-density mounting is possible
•
Low forward voltage V
F
, optimum for low voltage rectification
•
Low V
F
type of MA3X704A (MA704A)
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
•
SS-Mini type 3-pin package
0.28
±0.05
0.12
+0.05
–0.02
(0.44)
3°
(0.44)
0.60
+0.05
–0.03
3
1.60
±0.05
(0.80)
1 2
(0.51)
(0.80) (0.80)
1.60
+0.05
–0.03
3°
0.28
±0.05
(0.51)
0 to 0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
F
I
FM
T
j
T
stg
Rating
30
30
30
150
125
−55
to
+125
Unit
V
V
mA
mA
°C
°C
1 : Anode
2 : N.C.
3 : Cathode
EIAJ : SC-89
SSMini3-F2 Package
Marking Symbol: M2M
Internal Connection
3
1
2
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
Detection efficiency
C
t
t
rr
η
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
Ω
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
1.5
1
65
Conditions
Min
Typ
Max
30
0.3
1
pF
ns
%
Unit
µA
V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Bias Application Unit N-50BU
t
r
10%
3. *: t
rr
measuring instrument
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00062AED
(0.15)
(0.375)
0.88
+0.05
–0.03
Publication date: August 2001
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
