Band Switching Diodes
MA4X862
Silicon epitaxial planar type
Unit : mm
For band switching
I
Features
•
Two electrically isolated elements incorporated
•
Small diode capacitance C
D
•
Low forward dynamic resistance r
f
•
Optimum for a band switching of a tuner
2.8
−
0.3
0.65
±
0.15
+
0.2
1.5
−
0.05
+
0.25
0.65
±
0.15
0.5 R
1.9
±
0.2
0.95
4
0.5
1
2.9
−
0.05
+
0.2
0.95
+
0.1
3
0.4
−
0.05
2
0.2
+
0.2
−
0.1
Parameter
Reverse voltage (DC)
Forward current
(DC)
Single
Double
Symbol
V
R
I
F
T
opr
T
stg
Rating
35
100
75
−25
to
+85
−55
to
+100
Unit
V
mA
mA/Unit
°C
°C
1.1
0.4
±
0.2
Operating ambient temperature
Storage temperature
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1I
Internal Connection
4
3
1
2
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance
Symbol
I
R
V
F
C
D
r
f1
*1
Conditions
V
R
= 33 V
I
F
= 100 mA
V
R
= 6 V, f = 1 MHz
I
F
= 2 mA, f = 100 MHz
Min
Typ
0 to 0.1
0.1 to 0.3
0.8
Max
100
1.0
1.2
0.65
0.98
0.16
−
0.06
I
Absolute Maximum Ratings
T
a
= 25°C
+
0.1
Unit
nA
V
pF
Ω
Ω
r
f2*2
Note) 1．
Rated input/output frequency: 100 MHz
2． 1 : r
f
measuring instrument: Nihon Koshuha Model TDC-121A
*
*2 : r
f
measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
0.6
+
0.1
−
0
0.4
−
0.05
1.45
+
0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
