UNR221x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR2210/2215/2216/2217
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
50
50
0.1
0.5
0.01
0.1
0.2
0.4
0.5
1.0
1.5
2.0
h
FE
V
CE
=
10 V, I
C
=
5 mA
6
20
30
35
60
60
80
80
160
V
CE(sat)
V
OH
V
OL
I
C
=
10 mA, I
B
=
0.3 mA
I
C
=
10 mA, I
B
=
1.5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 kΩ
f
T
R
1
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
−30%
150
0.51
1.0
2.2
4.7
10
22
47
+30%
MHz
kΩ
4.9
0.2
V
V
400
460
0.25
V
200
20
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR2213
(Collector open) UNR2212/2214/221D/
221E/221M/221N/221T
UNR221Z
UNR2211
UNR221F/221K
UNR2219
UNR2218/221L/221V
Forward current UNR221V
transfer ratio
UNR2218/221K/221L
UNR2219/221D/221F
UNR2211
UNR2212/221E
UNR221Z
UNR2213/2214/221M
UNR221N/221T
UNR2210
*
/2215
*
/2216
*
/2217
*
Collector-emitter saturation voltage
UNR221V
Output voltage high-level
Output voltage low-level
UNR2213/221K
UNR221D
UNR221E
Transition frequency
Input resistance
UNR2218
UNR2219
UNR221M/211V
UNR2216/221F/221L/
221N/221Z
UNR2211/2214/2215/221K
UNR2212/2217/221T
UNR2210/2213/221D/221E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
2
SJH00010CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
