UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
s
Electrical Characteristics
Parameter
Collector cutoff current
UN5111
UN5112/5114/511E/511D/511M/511N/511T
UN5113
Emitter
cutoff
current
UN5115/5116/5117/5110
UN511F/511H
UN5119
UN5118/511L/511V
UN511Z
Collector to base voltage
UN511N/511T/511V/511Z
Collector to emitter voltage
UN511N/511T
UN5111
UN5112/511E
UN5113/5114/511M
Forward
current
transfer
ratio
UN5115*/5116*/5117*/5110*
UN511F/511D/5119/511H
UN5118/511L
UN511N/511T
UN511V
UN511Z
Collector to emitter saturation voltage
UN511V
Output voltage high level
Output voltage low level
UN5113
UN511D
UN511E
Transition frequency
UN511Z
UN5111/5114/5115
UN5112/5117/511T
UN5113/5110/511D/511E
Input
resis-
tance
UN5116/511F/511L/511N/511Z
UN5118
UN5119
UN511H/511M/511V
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= –6V, I
C
= 0
– 0.01
–1.0
–1.5
–2.0
– 0.4
V
CBO
V
CEO
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
–50
–50
–50
–50
35
60
80
160
h
FE
V
CE
= –10V, I
C
= –5mA
30
20
80
6
60
V
CE(sat)
V
OH
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –10mA, I
B
= –1.5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
OL
V
CC
= –5V, V
B
= –3.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –10V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –6V, R
L
= 1kΩ
f
T
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 1mA, f = 200MHz
80
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
MHz
V
400
20
200
– 0.25
– 0.25
V
V
460
V
mA
Unit
µA
µA
V
* h
FE
rank classification (UN5115/5116/5117/5110)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
