Composite Transistors
XN04312
(XN4312)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
For switching/digital circuits
■
Features
•
Two elements incorporated into one package
(Transistors with built-in resistor)
•
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
3
2
1
■
Basic Part Number
•
UNR2212 (UN2212)
+
UNR2112 (UN2112)
0.30
+0.10
–0.05
0.50
+0.10
–0.05
10˚
1.1
+0.2
–0.1
Parameter
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
−50
−50
−100
300
150
−55
to
+150
Unit
V
V
mA
V
V
mA
mW
°C
°C
3
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
0 to 0.1
Marking Symbol: 7T
Internal Connection
4
Tr2
Tr1
2
1
5
6
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJJ00062BED
1.1
+0.3
–0.1
■
Absolute Maximum Ratings
T
a
=
25°C
(0.65)
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
0.4
±0.2
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
