Composite Transistors
XN04502
(XN4502)
Silicon NPN epitaxial planar type
Unit: mm
For general amplification
■
Features
•
Two elements incorporated into one package
•
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
3
2
1
0.30
+0.10
–0.05
■
Basic Part Number
•
2SD0602A (2SD602A)
×
2
0.50
+0.10
–0.05
10˚
1.1
+0.2
–0.1
0.65
±0.15
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
60
50
5
0.5
1
300
150
−55
to
+150
Unit
V
V
V
A
A
mW
°C
°C
Tr2
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
0 to 0.1
Marking Symbol: 5Q
Internal Connection
4
5
6
1.1
+0.3
–0.1
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
3
2
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
= 2
mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
= 300
mA, I
B
= 30
mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
85
40
0.35
200
6
15
0.60
V
MHz
pF
Min
60
50
5
0.1
340
Typ
Max
Unit
V
V
V
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2003
SJJ00076BED
0.4
±0.2
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
