Composite Transistors
XN06435
(XN6435)
Silicon PNP epitaxial planar type
Unit: mm
For high-frequency amplification
■
Features
•
Two elements incorporated into one package
•
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
3
2
1
0.30
+0.10
–0.05
■
Basic Part Number
•
2SA1022
×
2
0.50
+0.10
–0.05
10˚
1.1
+0.2
–0.1
(0.65)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
−30
−20
−5
−30
300
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
0 to 0.1
Marking Symbol: 7W
Internal Connection
4
5
6
1.1
+0.3
–0.1
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Tr2
3
2
Tr1
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
ratio
*
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
h
FE(Small
/Large)
Conditions
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CB
= −10
V, I
E
=
1 mA
V
CB
= −10
V, I
E
=
1 mA
I
C
= −10
mA, I
B
= −1
mA
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
5 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
2 MHz
V
CE
= −10
V, I
E
=
1 mA, f
=
10.7 MHz
Min
Typ
−
0.7
Max
−
0.1
−100
−10
Unit
V
µA
µA
µA
V
MHz
50
0.50
0.99
−
0.1
150
2.8
22
1.2
220
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common emitter)
V
CE(sat)
f
T
NF
Z
rb
C
re
dB
Ω
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJJ00107BED
0.4
±0.2
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
