XN4381 参数 Datasheet PDF下载

XN04381

■

Electrical Characteristics

T

a

=

25°C

±

3°C

•

Tr1

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high-level

Output voltage low-level

Input resistance

Resistance ratio

Transition frequency

Symbol

V

CBO

V

CEO

I

CBO

I

CEO

I

EBO

h

FE

V

CE(sat)

V

OH

V

OL

R

1

R

1

/ R

2

f

T

V

CB

=

10 V, I

E

= −2

mA, f

=

200 MHz

Conditions

I

C

=

10

µA,

I

E

=

0

I

C

=

2 mA, I

B

=

0

V

CB

=

50 V, I

E

=

0

V

CE

=

50 V, I

B

=

0

V

EB

=

6 V, I

C

=

0

V

CE

=

10 V, I

C

=

5 mA

I

C

=

10 mA, I

B

=

0.3 mA

V

CC

=

5 V, V

B

=

0.5 V, R

L

=

1 kΩ

V

CC

=

5 V, V

B

=

3.5 V, R

L

=

1 kΩ

−30%

0.8

47

1.0

150

4.9

0.2

+30%

1.2

80

0.25

Min

50

50

0.1

0.5

0.1

Typ

Max

Unit

V

V

µA

µA

mA



V

V

V

kΩ



MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

•

Tr2

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high-level

Output voltage low-level

Input resistance

Resistance ratio

Transition frequency

Symbol

V

CBO

V

CEO

I

CBO

I

CEO

I

EBO

h

FE

V

CE(sat)

V

OH

V

OL

R

1

R

1

/ R

2

f

T

V

CB

= −10

V, I

E

=

50 mA, f

=

200 MHz

Conditions

I

C

= −10 µA,

I

E

=

0

I

C

= −2

mA, I

B

=

0

V

CB

= −50

V, I

E

=

0

V

CE

= −50

V, I

B

=

0

V

EB

= −6

V, I

C

=

0

V

CE

= −10

V, I

C

= −100

mA

I

C

= −100

mA, I

B

= −5

mA

V

CC

= −5

V, V

B

= −

0.5 V, R

L

=

500

Ω

V

CC

= −5

V, V

B

= −3.5

V, R

L

=

500

Ω

−30%

0.8

4.7

1.0

200

−4.9

−

0.2

+30%

1.2

50

−

0.25

Min

−50

−50

−1

−1

−2

Typ

Max

Unit

V

V

µA

µA

mA



V

V

V

kΩ



MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Common characteristics chart

P

T



T

a

500

Total power dissipation P

T

(mW)

400

300

200

100

0

0

40

80

120

160

Ambient temperature T

a

(

°C

)

2

SJJ00068BED