Composite Transistors
XN04604
(XN4604)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For amplification of low-frequency output
■
Features
•
Two elements incorporated into one package
•
Reduction of the mounting area and assembly cost by one half
3
2
1
(0.65)
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
4
5
6
1.50
+0.25
–0.05
2.8
+0.2
–0.3
Unit: mm
0.16
+0.10
–0.06
0.30
+0.10
–0.05
■
Basic Part Number
•
2SD1328
+
2SB0970 (2SB970)
0.50
+0.10
–0.05
10˚
1.1
+0.2
–0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Peak collector current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Peak collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
25
20
12
0.5
1
−15
−10
−7
−
0.5
−1
300
150
−55
to
+150
Unit
V
V
V
A
A
V
Tr2
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
0 to 0.1
1.1
+0.3
–0.1
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5I
Internal Connection
4
5
6
Tr1
V
V
A
A
mW
°C
°C
3
2
1
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00084BED
0.4
±0.2
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
