Composite Transistors
XP04312
(XP4312)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
■
Features
•
Two elements incorporated into one package
(Transistors with built-in resistor)
•
Reduction of the mounting area and assembly cost by one half
(0.425)
Unit: mm
0.12
+0.05
–0.02
0.2
±0.05
6
5
4
1.25
±0.10
2.1
±0.1
1
2
3
(0.65) (0.65)
■
Basic Part Number
•
UNR2212 (UN2212)
+
UNR2112 (UN2112)
10˚
1.3
±0.1
2.0
±0.1
0.9
±0.1
Parameter
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
−50
−50
−100
150
150
−55
to
+150
Unit
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
0 to 0.1
V
V
mA
V
V
mA
mW
°C
°C
Marking Symbol: 7T
Internal Connection
6
Tr1
Tr2
1
2
3
5
4
Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003
SJJ00177BED
0.9
+0.2
–0.1
■
Absolute Maximum Ratings
T
a
=
25°C
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
0.2
±0.1
5˚
1