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XP4501 参数 Datasheet PDF下载

XP4501图片预览
型号: XP4501
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面晶体管 [Silicon NPN epitaxial planer transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 36 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号XP4501的Datasheet PDF文件第2页  
Composite Transistors
XP4501
Silicon NPN epitaxial planer transistor
Unit: mm
0.425
1.25±0.1
0.425
0.2±0.05
For general amplification
2.1±0.1
0.65
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s
Features
0.65
1
2
3
6
5
4
0.9±0.1
q
2SD601A
×
2 elements
0.7±0.1
0 to 0.1
0.2±0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
60
50
7
100
200
150
150
–55 to +150
Unit
V
V
V
mA
mA
mW
1 : Emitter (Tr1)
4 : Emitter (Tr2)
2 : Base (Tr1)
5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol:
5H
Internal Connection
1
Tr1
6
5
4
˚C
˚C
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
160
0.1
150
3.5
min
60
50
7
0.1
100
460
0.3
V
MHz
pF
typ
max
Unit
V
V
V
µA
µA
0.12
–0.02
s
Basic Part Number of Element
0.2
+0.05
1