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MMBT5551 参数 Datasheet PDF下载

MMBT5551图片预览
型号: MMBT5551
PDF下载: 下载PDF文件 查看货源
内容描述: NPN高压晶体管 [NPN HIGH VOLTAGE TRANSISTOR]
分类和应用: 晶体晶体管光电二极管高压放大器
文件页数/大小: 6 页 / 261 K
品牌: PANJIT [ PAN JIT INTERNATIONAL INC. ]
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MMBT5551
NPN HIGH VOLTAGE TRANSISTOR
VOLTAGE
FEATURES
• NPN Silicon, planar design
• Collector-emitter voltage V
CE
= 160V
• Collector current I
C
= 300mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
160 Volts
POWER
250 mWatts
0.120(3.04)
0.110(2.80)
0.006(0.15)MIN.
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Marking: M51
C
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
B
E
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
o
PAR AM E T E R
C o lle c to r - E m i tte r Vo lta g e
C o lle c to r - B a s e Vo lta g e
E mi tte r - B a s e Vo lta g e
C o lle c to r C ur r e nt C o nti nuo us
S YM B O L
V
CEO
V
CBO
V
E BO
I
VA L U E
160
180
6
300
U N IT S
V
V
V
mA
C
THERMAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
o
PAR AME T E R
Ma x P o we r D i s s i p a ti o n ( No te 1 )
The rm a l Re s i s ta nc e ,J unc ti o n to A m b i e nt ( No te 1 )
Op e r a ti ng J unc ti o n Te mp e r a tur e a nd S to r a g e Te m p e ra tur e Ra ng e
S YM B O L
P
D
R
J
A
T
J
,T
S TG
VAL U E
250
325
- 5 5 to + 1 5 0
U N IT S
mW
O
C /W
O
C
NOTES:
1.Mounted on FR-4 PCB, single sided copper, mini pad.
October 24,2012-REV.00
PAGE . 1