Philips Semiconductors
Product specification
NPN general purpose transistor
FEATURES
•
Low current (max. 150 mA)
•
Low voltage (max. 50 V).
APPLICATIONS
•
General purpose switching and amplification,
e.g. audio amplifier driver stages.
1
handbook, halfpage
2PC1815
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
NPN transistor in a TO-92 (SOT54) plastic package.
PNP complement: 2PA1015.
2
3
2
1
3
MAM259
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
60
50
5
150
200
200
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 May 28
2
PHILIPS [ NXP SEMICONDUCTORS ]
