Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
1
a=3
PF(AV)
(W)
2.5
2 1.57
1.42
1
MBE641
0.5
0
0
0.5
1
1.5
IF(AV) (A)
2
Fig.4
1N5818. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)
/I
F(AV).
1
a=3
PF(AV)
(W)
2.5
2 1.57
1.42
1
MBE643
0.5
0
0
0.5
1
1.5
IF(AV) (A)
2
Fig.5
1N5819. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)
/I
F(AV).
6
1996 May 03