Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Ultra fast switching speed
•
Low forward voltage
•
Guard ring protected
•
Small SMD package.
APPLICATIONS
•
High-speed switching
•
Voltage clamping
•
Protection circuits.
1
handbook, halfpage
1PS59SB21
DESCRIPTION
Planar Schottky barrier diode with an
integrated guard ring for stress
protection in an SC-59 small plastic
SMD package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
3
3
2
n.c.
MLC357
1
Top view
Marking code:
21.
2
MSA314
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
I
FSM
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
storage temperature
junction temperature
−
−
−
−65
−
MIN.
40
200
1
+150
125
MAX.
V
mA
A
°C
°C
UNIT
1999 May 05
2
PHILIPS [ NXP SEMICONDUCTORS ]
