Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse current
diode capacitance
CONDITIONS
I
F
= 500 mA; see Fig.2
V
R
= 35 V; see Fig.3
V
R
= 35 V; T
j
= 100
°C;
see Fig.3
f = 1 MHz; V
R
= 0; see Fig.4
−
−
−
60
MIN.
1PS59SB20
MAX.
550
100
10
90
UNIT
mV
µA
mA
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-59 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
1998 Jul 28
3