Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Ultra fast switching speed
•
Low forward voltage
•
Fast recovery time
•
Guard ring protected
•
Small plastic SMD package
•
Capability of absorbing very high surge current.
APPLICATIONS
•
Rectification
•
Circuit protection
•
Polarity protection
•
Switched-mode power supplies.
handbook, halfpage
6
1PS74SB23
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
anode
cathode
anode
anode
cathode
anode
5
4
2, 5
1, 3,
4, 6
DESCRIPTION
Planar Schottky barrier diode encapsulated in an SC-74
(SOT457) small plastic SMD package.
1
Top view
2
3
MAM421
Marking code:
P1.
Fig.1
Simplified outline SC-74 (SOT457) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
Note
1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel.
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
t
p
=
8.3 ms; half sinewave;
JEDEC method; note 1
t
p
= 100
µs
CONDITIONS
−
−
−
−
−65
−
MIN.
MAX.
25
1
25
0.5
+150
125
UNIT
V
A
A
A
°C
°C
2003 Aug 04
2
PHILIPS [ NXP SEMICONDUCTORS ]
