NXP Semiconductors
1PS79SB10
Schottky barrier single diode
15
C
d
(pF)
10
msa891
5
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25 °C
Fig. 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
0.85
0.75
1
0.65
0.58
1.65 1.25
1.55 1.15
2
0.34
0.26
Dimensions in mm
0.17
0.11
02-12-13
Fig. 4.
SOD523
1PS79SB10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
14 August 2012
4/8
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