Philips Semiconductors
Product specification
Schottky barrier double diode
FEATURES
•
Low forward voltage
•
High breakdown voltage
•
Guard ring protected
•
Ultra small plastic SMD package
•
Low capacitance.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOT490
(SC-89) ultra small plastic SMD package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
1
Top view
Marking code:
S7.
2
MBK837
1PS89SB74
PINNING
PIN
1
2
3
DESCRIPTION
anode (a
1
)
cathode (k
2
)
common (k
1
, a
2
)
fpage
3
3
1
2
MLC358
Fig.1
Simplified outline (SOT490; SC-89) and
symbol.
MIN.
−
−
MAX.
UNIT
Per diode unless otherwise specified
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
T
amb
≤
25
°C
70
70
70
100
200
+150
+150
+150
V
mA
mA
mA
mW
°C
°C
°C
−
−
−
−65
−
−65
2001 Apr 20
2
PHILIPS [ NXP SEMICONDUCTORS ]
