Philips Semiconductors
Product specification
UHF power transistor
BLV90
handbook, halfpage
1.6
MDA394
handbook, halfpage
12
MDA395
120
η
C
(%)
PL
(W)
1.2
Gp
(dB)
8
Gp
η
C
80
0.8
4
0.4
40
0
0
0.1
0.2
PS (W)
0.3
0
0
0.4
0.8
1.2
PL (W)
0
1.6
f = 900 MHz; class-B operation; typical values.
T
mb
= 25
°C;
V
CE
= 12.5 V;
− − − −
T
a
= 25
°C;
V
CE
= 12.5 V;
- - - - T
a
= 25
°C;
V
CE
= 9.6 V
f = 900 MHz; class-B operation; typical values.
T
mb
= 25
°C;
V
CE
= 12.5 V;
− − − −
T
a
= 25
°C;
V
CE
= 12.5 V;
- - - - T
a
= 25
°C;
V
CE
= 9.6 V
Fig.7 Load power as a function of source power.
Fig.8
Power gain and efficiency as a function of
load power.
RUGGEDNESS
The device is capable to withstand a full load mismatch
(VSWR = 50; all phases) at rated load power up to a
supply voltage of 15.5 V at T
a
= 25
°C.
Device mounted on
a printed-circuit board (see Fig.6).
February 1996
7
PHILIPS [ NXP SEMICONDUCTORS ]
