Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency dual
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
BYV32 series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
PARAMETER
BYV32-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.85
20
25
MAX.
150
150
0.85
20
25
MAX.
200
200
0.85
20
25
UNIT
V
V
A
ns
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
a2
k
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)
1
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I
2
t for fusing
Storage temperature
Operating junction temperature
square wave
δ
= 0.5; T
mb
≤
115 ˚C
sinusoidal
a = 1.57; T
mb
≤
118 ˚C
t = 25
µs; δ
= 0.5;
T
mb
≤
115 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
t = 10 ms
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
20
18
28
20
125
137
78
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
O(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
1
Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
