Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
BYW29 series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
F(AV)
t
rr
PARAMETER
BYW29-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
MAX.
100
100
0.895
8
25
MAX.
150
150
0.895
8
25
MAX.
200
200
0.895
8
25
UNIT
V
V
A
ns
PINNING - TO220AC
PIN
1
2
tab
DESCRIPTION
cathode (k)
anode (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a
k
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
mb
≤
128 ˚C
sinusoidal; a = 1.57;
T
mb
≤
130 ˚C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
8
7.3
11.3
16
80
88
32
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
F(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
mb
≤
128 ˚C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
