Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
CONDITIONS
open emitter
R
BE
= 0
Ω
open collector
t
p
≤
150
µs; δ
= 5 %
t
p
≤
150
µs; δ
= 5 %;
T
mb
= 75
°C
−
−
−
−
−
−65
−
at 0.2 mm from case; t
≤
10 s
−
MIN.
RX1214B300Y
MAX.
65
60
3
21
570
+200
200
235
V
V
V
A
W
UNIT
°C
°C
°C
handbook, halfpage
800
MGD976
Ptot
(W)
600
400
200
0
−50
0
50
100
150
200
Tmb (°C)
t
p
= 150
µs; δ
= 5 %
Fig.2
Power derating curve.
1997 Feb 19
3
PHILIPS [ NXP SEMICONDUCTORS ]
