Philips Semiconductors
Product specification
High speed CAN transceiver
TJA1040
SYMBOL
V
O(reces)
PARAMETER
recessive output voltage
CONDITIONS
normal mode; V
TXD
= V
CC
; 2
no load
standby mode; no load
MIN.
TYP.
0.5V
CC
0
−70
70
−
3
MAX.
UNIT
V
V
mA
mA
mA
−0.1
−40
−2.5
+0.1
−95
100
+2.5
I
O(sc)
short-circuit output current
V
TXD
= 0 V
pin CANH; V
CANH
= 0 V
pin CANL; V
CANL
= 40 V 40
I
O(reces)
V
dif(th)
recessive output current
differential receiver threshold
voltage
−27
V < V
CAN
< +32 V
−12
V < V
CANL
< +12 V;
−12
V < V
CANH
< +12 V
normal mode (see Fig.6) 0.5
standby mode
V
hys(dif)
differential receiver hysteresis
voltage
input leakage current
common-mode input
resistance
common-mode input
resistance matching
differential input resistance
common-mode input
capacitance
differential input capacitance
normal mode;
−12
V < V
CANL
< +12 V;
−12
V < V
CANH
< +12 V
V
CC
= 0 V;
V
CANH
= V
CANL
= 5 V
standby or normal mode
V
CANH
= V
CANL
standby or normal mode
V
TXD
= V
CC
; not tested
V
TXD
= V
CC
; not tested
normal mode
0.4
50
0.7
0.7
70
0.9
1.15
100
V
V
mV
I
LI
R
i(cm)
R
i(cm)(m)
R
i(dif)
C
i(cm)
C
i(dif)
t
d(TXD-BUSon)
t
d(TXD-BUSoff)
t
d(BUSon-RXD)
t
d(BUSoff-RXD)
t
PD(TXD-RXD)
t
dom(TXD)
t
BUS
t
d(stb-norm)
−5
15
−3
25
−
−
25
10
15
35
40
300
0.75
5
0
25
0
50
−
−
70
50
65
100
−
600
1.75
7.5
+5
35
+3
75
20
10
µA
kΩ
%
kΩ
pF
pF
Timing characteristics;
see Fig.8
delay TXD to bus active
delay TXD to bus inactive
delay bus active to RXD
delay bus inactive to RXD
propagation delay TXD to RXD V
STB
= 0 V
TXD dominant time-out
dominant time for wake-up via
bus
delay standby mode to normal
mode
V
TXD
= 0 V
standby mode
normal mode
110
95
115
160
255
1000
5
10
ns
ns
ns
ns
ns
µs
µs
µs
Thermal shutdown
T
j(sd)
Note
1. All parameters are guaranteed over the virtual junction temperature range by design, but only 100% tested at 125
°C
ambient temperature for dies on wafer level, and in addition to this 100% tested at 25
°C
ambient temperature for
cased products; unless specified otherwise. For bare dies, all parameters are only guaranteed with the backside of
the die connected to ground.
shutdown junction temperature
155
165
180
°C
2003 Oct 14
7
PHILIPS [ NXP SEMICONDUCTORS ]
