The XENSIV™ TLE4999I3 provides all means that are necessary to fulfill the state-of-the-art functional safety requirements on system level. It is developed in full compliance with ISO 26262. The device provides high redundancy on one chip by means of two sensor elements included within one monolithic silicon design. The two diverse Hall sensor elements („main” and „sub”) have internally separated signal paths within the chip. A plausibility check secures the high diagnostic coverage required for premium functional safety compliant systems up to ASIL-D.
This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.04 mOhm on-resistance. ISC030N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
