PSBH 55
10
V
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10W
6
5
4
60
[A]
50
DC
sin.180°
rec.120°
rec.60°
rec.30°
40
1
30
20
V
G
2
1
3
10
ITAV
0
50
100
TC(°C)
150
200
0.1
10
0
10
1
I
G
10
2
10
3
mA
10
4
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
K/W
1.6
Z thJK
Z
thJC
1.2
0.8
0.4
Z th
0.01
0.1
t[s]
1
10
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
200
[W]
175
150
125
100
75
50
25
PVTOT
0
ITAVM
20
DC
sin.180°
rec.120°
rec.60°
rec.30°
40
[A]
0
0.95
PSBH 55
TC
0.2 0.07 = RTHCA [K/W]
0.32
70
75
80
85
65
0.53
90
95
100
105
110
2.2
115
120
°C
Tamb
50
100
[K]
150
125
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
