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PSHI25-12 参数 Datasheet PDF下载

PSHI25-12图片预览
型号: PSHI25-12
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT Module]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 136 K
品牌: POWERSEM [ POWERSEM GMBH ]
 浏览型号PSHI25-12的Datasheet PDF文件第1页浏览型号PSHI25-12的Datasheet PDF文件第2页浏览型号PSHI25-12的Datasheet PDF文件第4页  
PSHI 25/12
50
A
40
V
GE
= 17V
15V
13V
50
A
40
30
20
10
0
9V
V
GE
= 17V
15V
13V
I
C
T
VJ
= 25°C
11V
I
C
T
VJ
= 125°C
11V
30
20
10
0
9V
25T120
25T120
0
1
2
3
4
V
CE
5
6
V
7
0
1
2
3
4
5
V
CE
6
V
7
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
50
A
40
I
C
V
CE
= 20V
50
40
A
30
T
VJ
= 125°C
T
VJ
= 25°C
I
F
30
20
T
VJ
= 125°C
T
VJ
= 25°C
20
10
25T120
10
0
0
25T120
4
6
8
10
12
V
GE
14
V
16
0
1
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
20
V
50
t
rr
200
160
ns
120
T
VJ
= 125°C
V
R
= 600V
I
F
= 15A
15
V
GE
40
A
V
CE
= 600V
I
C
= 15A
I
RM
t
rr
30
20
10
80
40
5
25T120
10
I
RM
0
0
25T120
0
20
40
60
80
nC
Q
G
100
0
200
400
600
-di/dt
800
A/µs
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20