November 2006
rev 0.3
Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
ASM2P3807A
Parameter
1
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ
4.5
5.5
Max
6
8
Unit
pF
pF
Note:1. This parameter is measured at characterization but not tested.
Power Supply Characteristics
Symbol
∆I
CC
Parameter
Quiescent Power Supply
Current TTL Inputs HIGH
Test Conditions
1
V
CC
= Max.
V
IN
= V
CC
–0.6V
3
V
CC
= Max.
Min
Typ
2
10
Max
30
Unit
µA
I
CCD
Dynamic Power Supply
Current
4
Input toggling
50% Duty Cycle
Outputs Open
V
CC
= Max.
Input toggling
V
IN
= V
CC
V
IN
= GND
0.31
0.45
mA/
MHz
I
C
Total Power Supply Current
6
50% Duty Cycle
Outputs Open
fi = 50MHz
V
IN
= V
CC
V
IN
= GND
15.5
22.8
5
mA
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 3.3V, +25°C ambient.
3. Per TTL driven input (V
IN
= V
CC
-0.6V); all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
5. Values for these conditions are examples of the IC formula. These limits are guaranteed but not tested.
6. I
C
= IQUIESCENT + IINPUTS + IDYNAMIC
I
C
= I
CC
+
∆I
CC
DHNT + I
CCD
(fi)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= V
CC
-0.6V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fi = Input Frequency
All currents are in milliamps and all frequencies are in megahertz.
3.3V CMOS 1-TO-10 CLOCK DRIVER
Notice: The information in this document is subject to change without notice.
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PULSECORE [ PulseCore Semiconductor ]
