CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Forward Voltage Temp. Coefficient
Reverse Voltage
Junction Capacitance
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
(I
R
= 10 µA)
(V
F
= 0 V, f = 1 MHz)
(V
F
= 1 V, f = 1 MHz)
(V
R
= 3.0 V)
(I
C
= 1.0 mA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
(V
CE
= 0 V, f = 1 MHz)
Test Conditions
(I
F
= 60 mA)
Symbol
V
F
V
F
T
A
V
R
C
J
I
R
BV
CEO
BV
ECO
I
CEO
C
CE
70
7
6.0
Min
Typ**
1.35
-1.8
15
50
65
.35
100
10
5
8
50
10
Max
1.65
Unit
V
mV/°C
V
pF
µA
V
V
nA
pF
TRANSFER CHARACTERISTICS
AC Characteristic
NON-SATURATED SWITCHING TIMES
Turn-on Time
Turn-off Time
SATURATED SWITCHING TIMES
Turn-on Time
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Rise Time
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Turn-off Time
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Fall Time
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
** All typicals at T
A
= 25°C
(I
F
= 10 mA, V
CE
= 0.4 V)
(I
F
= 20 mA, V
CE
= 0.4 V)
t
f
14
24
11
20
µs
(I
F
= 10 mA, V
CE
= 0.4 V)
(I
F
= 20 mA, V
CE
= 0.4 V)
t
off
23
39
18
34
µs
(I
F
= 10 mA, V
CE
= 0.4 V)
(I
F
= 20 mA, V
CE
= 0.4 V)
t
r
3.0
6.0
2.0
4.0
µs
(I
F
= 10 mA, V
CE
= 0.4 V)
(I
F
= 20 mA, V
CE
= 0.4 V)
t
on
4.2
8.0
3.0
5.5
µs
(R
L
= 100
, I
C
= 2 mA, V
CC
= 10 V) (Fig. 7)
Test Conditions
Symbol
t
on
t
off
Min
Typ**
6.0
5.5
Max
10
10
Units
µs
µs
7/17/00
200027B
QT [ QT OPTOELECTRONICS ]
