BAT42
SILICON PLANAR SCHOTTKY DIODES
FEATURES
* Fast Switching Device(T
RR
<4.0nS)
* DO-35 Package (JEDEC)
* Through-Hole Device Type Mounting
* Hermetically Sealed Glass
* Compression Bonded Construction
* All external surfaces are corrosion resistant and leads
are readily solderable
.022 (0.56)
DIA.
.018 (0.46)
1.02 (26.0)
MIN.
DO-35
.165 (4.2)
MAX.
.079 (2.0)
MAX.
1.02 (26.0)
MIN.
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted )
RATINGS
Maximum Forward Comtinuous Reverse Voltage
Maximum Forward Comtinuous Current @ T A =25 C
O
o
SYMBOL
V
R
I
F
I
FRM
I
FSM
BAT42
30
200
500
4
200
125
-65 to + 150
UNITS
V
mAmps
mAmps
Amps
mW
O
Maximum Peak Forward Current @tp<1s,d<0.5
Surge Forward Current @ tp<10ms
Maximum Power Dissipation @ T A =65 C
O
P
D
T
J
T
STG
o
Junction Temperature
Storage Temperature Range
C
C
O
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Reverse breakdown voltage (I
R
=100mA)
Reverse voltage leakage current (V
R
=25V,T
J
=25 C)
O
(V
R
=25V,T
J
=100 C)
O
SYMBOL
V
(BR)R
I
R
MIN.
30
-
TYP.
-
-
-
-
MAX.
-
0.5
100
0.40
0.65
1.0
-
5
UNITS
V
mA
(I
F
=10mA)
Forward voltage Pulse Tesx tp<300ms,d<2% (I
F
=50mA)
(I
F
=200mA)
Diode capacitance (V
R
=1,f=1MHz)
Reveres recovery time (I
F
=I
R
=10mA,I
RR
=1mA,R
L
=100W)
C
D
-
-
V
F
-
-
-
7.0
-
V
pF
nS
2006-3
t
rr
RECTRON [ RECTRON SEMICONDUCTOR ]
