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BC817-40 参数 Datasheet PDF下载

BC817-40图片预览
型号: BC817-40
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 23双极晶体管晶体管( NPN ) [SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN)]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 350 K
品牌: RECTRON [ RECTRON SEMICONDUCTOR ]
 浏览型号BC817-40的Datasheet PDF文件第2页浏览型号BC817-40的Datasheet PDF文件第3页浏览型号BC817-40的Datasheet PDF文件第4页  
BC817-16
BC817-25
BC817-40
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
FEATURES
* For general AF applications
* High collector current
* High current gain
* Low collector-emitter saturation voltage
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector dissipation
Junction and storage temperature
o
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J,
T
stg
VALUE
50
45
5
0.5
0.3
-55 -150
UNITS
V
V
V
A
W
o
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 10mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 10mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 1mA, I
C
=0)
Collector cut-off current (V
CB
= 45V, I
E
=0)
Emitter cut-off current (V
EB
= 4V, I
C
=0)
DC current gain (V
CE
= 1V, I
C
= 100mA)
Collector-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA)
Base-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA)
Base-emitter voltage (V
CE
= 1V, I
C
= 500mA)
Collector capactiance (V
CB
=10V, f = 1MHz)
Transition frequency (V
CE
= 5V, I
C
= 10mA, f= 100MH
Z
)
MARKING:
BC817-16---6A;
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
V
BE(ON)
100
BC817-16 BC817-25 BC817-40 BC817-16 BC817-25 BC817-40
MIN.
50
45
5
-
-
160
-
-
-
10
100
-
BC817-40---6C
2007-3
250
250
MAX.
-
-
-
0.1
0.1
400
0.7
1.2
1.2
600
UNITS
V
V
V
mA
mA
-
V
V
V
pF
MH
Z
Cob
f
T
BC817-25---6B;