ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (2) (I C = -1.0 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = -100uAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = -100uAdc, I C = 0)
Base Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc)
Collector Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
-40
-40
-5.0
-
-
-
-
-
-50
-50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc)
(I C = -1.0mAdc, V CE = -1.0Vdc)
(I C = -10mAdc, V CE = -1.0Vdc)
(I C = -50mAdc, V CE = -1.0Vdc)
(I C = -100mAdc, V CE = -1.0Vdc)
Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc)
(I C = -50mAdc, I B = -5.0mAdc)
Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc)
(I C = -50mAdc, I B = -5.0mAdc)
VCE(sat)
hFE
60
80
100
60
30
-
-
-0.65
-
-
-
300
-
-
-0.25
-0.4
-0.85
-0.95
Vdc
-
VBE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 100MHz)
Output Capacitance (V CB = -5.0Vdc, I E = 0, f= 1.0MHz)
Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz)
Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (V CE = -10Vdc, I C = -10mAdc, f= 1.0kHz)
Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
Noise Figure (V CE = -5.0Vdc, I C = -100uAdc, RS= 1.0kW, f= 1.0kHz)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
250
-
-
2.0
0.1
100
3.0
-
-
4.5
10
12
10
400
60
4.0
MHz
pF
pF
kW
X 10 -
4
-
umhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = -3.0Vdc, V BE = 0.5Vdc, I C = -10mAdc, I B1 = -1.0mAdc)
td
tr
ts
tf
-
-
-
-
35
35
225
75
ns
(V CC = -3.0Vdc, I C = -10mAdc, I B1 = I B2 = -1.0mAdc)
ns
<
Note : Pulse Test: Pulse Width<300ms,Duty Cycle-2.0%
-
RECTRON [ RECTRON SEMICONDUCTOR ]
