MMBTA42
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* High breakdown voltage
* Low collector-emitter saturation voltage
* Complementary to MMBTA92 (NPN)
SOT-23
MECHANICAL DATA
*
*
*
*
*
COLLECTOR
3
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.019(2.00)
0.071(1.80)
1
3
0.110(2.80)
2
0.118(3.00)
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGS
( @ T
A
= 25 C unless otherwise noted )
RATINGS
Collector Current-Continuous
Collector Power Dissipation
SYMBOL
I
C
P
C
T
J
T
STG
VALUE
0.3
350
150
-55 to +150
UNITS
A
mW
o
o
Max. Operating Temperature Range
Storage Temperature Range
C
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
=100uA,I
E
=0)
Collector-emitter breakdown voltage (I
C
=1mA,I
B
=0)
Emitter-Base breakdown voltage (I
E
=100uA,I
C
=0)
Collector cut-off current (V
CB
=200V,I
E
=0)
Emitter cut-off current (V
EB
=5V,I
C
=0)
(V
CE
=10V,I
C
=1mA)
DC current gain
(V
CE
=10V,I
C
=10mA)
(V
CE
=10V,I
C
=30mA)
Collector-emitter saturation voltage (I
C
=20mA,I
B
=2mA)
Base-emitter saturation voltage (I
C
=20mA,I
B
=2mA)
Transition frequency (V
CE
=20V,I
C
=10mA,f=30MHz)
Note: "Fully ROHS Complant", "100% Sn plating (Pb-free)".
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
MIN.
300
300
5
-
-
60
100
60
-
-
50
TYP.
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.25
0.1
-
200
-
0.2
0.9
-
UNITS
V
V
V
uA
uA
-
-
-
V
V
MHz
2007-5
RECTRON [ RECTRON SEMICONDUCTOR ]
